Invention Grant
- Patent Title: Method for fabricating wafer scale/nano sub micron gap electrodes and arrays via photolithography
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Application No.: US16755192Application Date: 2018-10-09
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Publication No.: US11784227B2Publication Date: 2023-10-10
- Inventor: Leela Mohana Reddy Arava , Nirul Masurkar
- Applicant: Wayne State University
- Applicant Address: US MI Detroit
- Assignee: Wayne State University
- Current Assignee: Wayne State University
- Current Assignee Address: US MI Detroit
- Agency: Fishman Stewart PLLC
- International Application: PCT/US2018/055089 2018.10.09
- International Announcement: WO2019/074977A 2019.04.18
- Date entered country: 2020-04-10
- Main IPC: H01L29/40
- IPC: H01L29/40 ; G01N27/414 ; H01L29/417
Abstract:
A electronic device and a fabrication method is provided. The electronic device having a first electrode and a second electrode. A nano-gap is formed between first and second electrode. The first electrode, the second electrode and the gap may be located in the same layer of the device.
Public/Granted literature
- US20210288152A1 METHOD FOR FABRICATING WAFER SCALE/NANO SUBMICRON GAP ELECTRODES AND ARRAYS VIA PHOTOLITHOGRAPHY Public/Granted day:2021-09-16
Information query
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