A semiconductor device structure is provided. The semiconductor device structure includes a contact layer over a metal silicide layer. The contact layer extends through a first dielectric structure. The semiconductor device structure includes a first metal nitride barrier layer over sidewalls of the contact layer. The first metal nitride barrier layer is directly adjacent to the first dielectric structure. The semiconductor device structure includes a second metal nitride barrier layer partially between the contact layer and the metal silicide layer and partially between the contact layer and the first metal nitride barrier layer. The metal silicide layer is below the first metal nitride barrier layer and the second metal nitride barrier layer.