According to one embodiment, a semiconductor device includes first to fourth electrodes, a semiconductor member, and first and second insulating members. The semiconductor member is located between the second and first electrodes, and includes a first semiconductor region a second semiconductor region between the first semiconductor region and the first electrode, a third semiconductor region between the second semiconductor region and the first electrode, a fourth semiconductor region between the second semiconductor region and the first electrode, a fifth semiconductor region between the first semiconductor region and the second electrode, a sixth semiconductor region between the fifth semiconductor region and the second electrode, and a seventh semiconductor region between the fifth semiconductor region and the second electrode. A portion of the first insulating member is between the third electrode and the semiconductor member. A portion of the second insulating member is between the fourth electrode and the semiconductor member.