Invention Grant
- Patent Title: Thin film transistor with insulating portion between source/drian electrode and gate insulating layer, and manufacturing method thereof
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Application No.: US16309786Application Date: 2018-04-04
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Publication No.: US11784258B2Publication Date: 2023-10-10
- Inventor: Kuhyun Park
- Applicant: BOE Technology Group Co., Ltd. , Hefei Boe Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.,HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.,HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Beijing; CN Anhui
- Agency: Myers Bigel, P.A.
- Priority: CN 1710500420.X 2017.06.27
- International Application: PCT/CN2018/081832 2018.04.04
- International Announcement: WO2019/001066A 2019.01.03
- Date entered country: 2018-12-13
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/417 ; H01L29/66

Abstract:
A thin film transistor, a manufacturing method thereof, an array substrate, and a display device are provided. The thin film transistor comprises a base substrate, a gate on the base substrate, a gate insulating layer covering the gate, an active layer on the gate insulating layer, a first electrode and a second electrode over and electrically connected to the active layer, and a first insulating portion between the gate insulating layer and the first electrode. An orthographic projection of the first insulating portion on the base substrate, an orthographic projection of the first electrode on the base substrate, and an orthographic projection of a boundary between a side surface of the gate and an upper surface of the gate on the base substrate at least partially overlap.
Public/Granted literature
- US20200335631A1 THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE Public/Granted day:2020-10-22
Information query
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