Invention Grant
- Patent Title: Vertical photodiode
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Application No.: US17308651Application Date: 2021-05-05
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Publication No.: US11784275B2Publication Date: 2023-10-10
- Inventor: Charles Baudot , Sebastien Cremer , Nathalie Vulliet , Denis Pellissier-Tanon
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: CROWE & DUNLEVY
- Priority: FR 51988 2018.03.07
- The original application number of the division: US16292525 2019.03.05
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L31/105 ; H01L31/0232 ; G02B6/12 ; H01L31/028

Abstract:
A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.
Public/Granted literature
- US20210257507A1 VERTICAL PHOTODIODE Public/Granted day:2021-08-19
Information query
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