Invention Grant
- Patent Title: Bi-polar border region in piezoelectric device
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Application No.: US17933958Application Date: 2022-09-21
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Publication No.: US11784628B2Publication Date: 2023-10-10
- Inventor: Jyothi Swaroop Sadhu , Ralph Rothemund , Alireza Tajic
- Applicant: Qorvo US, Inc.
- Applicant Address: US NC Greensboro
- Assignee: Qorvo US, Inc.
- Current Assignee: Qorvo US, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H03H9/17
- IPC: H03H9/17 ; H03H9/02 ; H03H9/54 ; H03H7/01

Abstract:
An acoustic device includes a foundation structure and a transducer provided over the foundation structure. The foundation structure includes a piezoelectric layer between a top electrode and a bottom electrode. The piezoelectric layer has an active portion within an active region of the transducer, and a bi-polar border portion within a border region of the transducer. The piezoelectric material in the active portion has a first polarization. The bi-polar border portion has a first sub-portion and a second sub-portion, which resides either above or below the first sub-portion. The piezoelectric material in the first sub-portion has the first polarization, and the piezoelectric material in the second sub-portion has a second polarization, which is opposite the first polarization.
Public/Granted literature
- US20230036920A1 BI-POLAR BORDER REGION IN PIEZOELECTRIC DEVICE Public/Granted day:2023-02-02
Information query
IPC分类: