Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
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Application No.: US17718321Application Date: 2022-04-12
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Publication No.: US11785780B2Publication Date: 2023-10-10
- Inventor: Gerben Doornbos , Mauricio Manfrini
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- The original application number of the division: US17030334 2020.09.23
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H10B51/30 ; H01L29/51
Abstract:
A semiconductor includes a ferroelectric layer, a first semiconductor layer, a first gate, a second semiconductor layer, a second gate and contact structures. The ferroelectric layer has a first surface and a second surface opposite to the first surface. The first semiconductor layer is disposed on the first surface of the ferroelectric layer. The first gate is disposed on the first semiconductor layer over the first surface. The second semiconductor layer is disposed on the second surface of the ferroelectric layer. The second gate is disposed on the second semiconductor layer over the second surface. The contacts structures are connected to the first semiconductor layer and the second semiconductor layer.
Public/Granted literature
- US20220238538A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2022-07-28
Information query
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