Invention Grant
- Patent Title: Microphone device with single crystal piezoelectric film and method of forming the same
-
Application No.: US17979783Application Date: 2022-11-03
-
Publication No.: US11785852B2Publication Date: 2023-10-10
- Inventor: You Qian , Joan Josep Giner De Haro , Rakesh Kumar
- Applicant: VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.
- Applicant Address: SG Singapore
- Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.
- Current Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.
- Current Assignee Address: SG Singapore
- Agent Winston Hsu
- The original application number of the division: US16722143 2019.12.20
- Main IPC: H10N30/067
- IPC: H10N30/067 ; H10N30/073 ; H04R17/02 ; H10N30/08 ; H10N30/87 ; H10N30/00 ; H10N30/06

Abstract:
A method of forming a microphone device includes: forming a through-hole in a substrate wafer; providing a second wafer; bonding the second wafer to the substrate wafer; and forming a top electrode over a first surface of a single-crystal piezoelectric film of the second wafer. The second wafer may include the single-crystal piezoelectric film. The single-crystal piezoelectric film may have a first surface and an opposing second surface. The second wafer may further include a bottom electrode arranged adjacent to the second surface, and a support member over the single-crystal piezoelectric film. The through-hole in substrate wafer may be at least substantially aligned with at least one of the top electrode and the bottom electrode.
Public/Granted literature
- US20230051656A1 MICROPHONE DEVICE WITH SINGLE CRYSTAL PIEZOELECTRIC FILM AND METHOD OF FORMING THE SAME Public/Granted day:2023-02-16
Information query