Invention Grant
- Patent Title: Plane programming scheme for non-volatile memory with large block sizes
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Application No.: US16903196Application Date: 2020-06-16
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Publication No.: US11789612B2Publication Date: 2023-10-17
- Inventor: Karin Inbar , Sahil Sharma , Grishma Shah
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Addison
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Addison
- Agency: Vierra Magen Marcus LLP
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
For a non-volatile memory system with a multi-plane memory die having a large block size, to be able to more readily accommodate zone-based host data using zones that are of a smaller size that the block size on the memory, the memory system assigns data from different zones to different subsets of the planes of a common memory die. The memory system is configured to accumulate the data from the different zones into different write queues and then assemble the data from the different write zones into pages or partial pages of data that can be simultaneously programmed into memory cells connected to different word lines that are in different sub-blocks of different blocks in the corresponding assigned planes of the die.
Public/Granted literature
- US20210389879A1 PLANE PROGRAMMING SCHEME FOR NON-VOLATILE MEMORY WITH LARGE BLOCK SIZES Public/Granted day:2021-12-16
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