Invention Grant
- Patent Title: Power leakage blocking in low-dropout regulator
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Application No.: US17354993Application Date: 2021-06-22
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Publication No.: US11790996B2Publication Date: 2023-10-17
- Inventor: Ruxin Wei
- Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Applicant Address: CN Wuhan
- Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Wuhan
- Agency: BAYES PLLC
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C16/30 ; G05F1/46 ; G05F1/575 ; H10B41/41 ; H10B43/40

Abstract:
In certain aspects, a circuit for power leakage blocking can include a voltage generation circuit that includes an amplifier connected at a negative input to a reference voltage and providing an output to a gate of a first transistor. A drain voltage of the first transistor can be fed back to a positive input of the amplifier. The voltage generation circuit can receive a first voltage at a source of the first transistor. The voltage generation circuit can supply a second voltage at a drain of the first transistor. The circuit can further include a pair of transistors. The pair of transistors can include a second transistor and a third transistor. Respective bulks of the pair of transistors can be connected to a bulk of the first transistor. The gates of the pair of transistors can be controlled according to a comparison between the first voltage and the second voltage, such that only one of the pair of transistors is on at a time.
Public/Granted literature
- US20220392545A1 POWER LEAKAGE BLOCKING IN LOW-DROPOUT REGULATOR Public/Granted day:2022-12-08
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