Invention Grant
- Patent Title: Residue removal during semiconductor device formation
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Application No.: US17344168Application Date: 2021-06-10
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Publication No.: US11791152B2Publication Date: 2023-10-17
- Inventor: Matthew S. Thorum
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- The original application number of the division: US15847587 2017.12.19
- Main IPC: H01L21/02
- IPC: H01L21/02 ; B08B3/08 ; H01L21/67 ; B81C1/00
Abstract:
In an example, a method may include removing a material from a structure to form an opening in the structure, exposing a residue, resulting from removing the material, to an alcohol gas to form a volatile compound, and removing the volatile compound by vaporization. The structure may be used in semiconductor devices, such as memory devices.
Public/Granted literature
- US20210305039A1 RESIDUE REMOVAL Public/Granted day:2021-09-30
Information query
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