Invention Grant
- Patent Title: Butted body contact for SOI transistor, amplifier circuit and method of providing the same
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Application No.: US17230846Application Date: 2021-04-14
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Publication No.: US11791340B2Publication Date: 2023-10-17
- Inventor: Simon Edward Willard
- Applicant: pSemi Corporation
- Applicant Address: US CA San Diego
- Assignee: pSemi Corporation
- Current Assignee: pSemi Corporation
- Current Assignee Address: US CA San Diego
- Agency: JAQUEZ LAND GREENHAUS & McFARLAND LLP
- Agent Alessandro Steinfl, Esq.
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/49 ; H01L27/02 ; H03F3/195 ; H03F3/217 ; H03F3/213 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/423 ; H01L29/786
Abstract:
Systems, methods, and apparatus for an improved body tie construction are described. The improved body tie construction is configured to have a lower resistance body tie exists when the transistor is “off” (Vg approximately 0 volts). When the transistor is “on” (Vg>Vt), the resistance to the body tie is much higher, reducing the loss of performance associated with presence of body tie. Space efficient Body tie constructions adapted for cascode configurations are also described.
Public/Granted literature
- US20210305279A1 Butted Body Contact for SOI Transistor Public/Granted day:2021-09-30
Information query
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