Invention Grant
- Patent Title: Capacitor and method for fabricating the same
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Application No.: US17567625Application Date: 2022-01-03
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Publication No.: US11791374B2Publication Date: 2023-10-17
- Inventor: Myung-Soo Lee , Cheol-Hwan Park , Chee-Hong An
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T GROUP LLP
- Priority: KR 20190107440 2019.08.30
- Main IPC: H10B12/00
- IPC: H10B12/00 ; H01L49/02

Abstract:
Disclosed is a capacitor having a high dielectric constant and low leakage current and a method for fabricating the same, wherein the capacitor may include a first conductive layer, a second conductive layer, a dielectric layer stack between the first conductive layer and the second conductive layer, a dielectric interface layer between the dielectric layer stack and the second conductive layer, and a high work function interface layer between the dielectric interface layer and the second conductive layer.
Public/Granted literature
- US20220130947A1 CAPACITOR AND METHOD FOR FABRICATING THE SAME Public/Granted day:2022-04-28
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