Invention Grant
- Patent Title: Methods of recycling silicon swarf into electronic grade polysilicon or metallurgical-grade silicon
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Application No.: US18089473Application Date: 2022-12-27
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Publication No.: US11791435B2Publication Date: 2023-10-17
- Inventor: Moon Chun , Christoph Sachs , David Verstraeten
- Applicant: Maxeon Solar Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: Maxeon Solar Pte. Ltd.
- Current Assignee: Maxeon Solar Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: C01B33/037
- IPC: C01B33/037 ; H01L31/18 ; B28D5/04 ; H01L31/028

Abstract:
Methods of recycling silicon swarf into electronic grade polysilicon or metallurgical-grade silicon are described herein are described. In an example, a method includes cutting a silicon ingot and recovering silicon swarf having a first purity from the cutting process. The recovered silicon is purified in an upgraded metallurgical silicon process to produce electronic grade polysilicon particles having a second purity higher than the first purity. The upgraded metallurgical silicon process can include dissolving the recovered silicon particles in a molten aluminum metal smelt.
Public/Granted literature
- US20230136895A1 METHODS OF RECYCLING SILICON SWARF INTO ELECTRONIC GRADE POLYSILICON OR METALLURGICAL-GRADE SILICON Public/Granted day:2023-05-04
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