Invention Grant
- Patent Title: Power amplifier system
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Application No.: US17102663Application Date: 2020-11-24
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Publication No.: US11791783B2Publication Date: 2023-10-17
- Inventor: Geunyong Lee , Suyeon Han , Seungchul Pyo , Youngsik Hur
- Applicant: Samsung Electro-Mechanics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR 20200117727 2020.09.14
- Main IPC: H03F1/07
- IPC: H03F1/07 ; H03F3/24 ; H03F3/195 ; H03F1/56

Abstract:
A power amplifier system includes: a drive stage configured to amplify an RF input signal and implemented in a substrate containing silicon; a power stage including a carrier amplifier configured to amplify a base signal from the RF input signal as amplified by the drive stage, and a peaking amplifier configured to amplify a peak signal from the RF input signal as amplified by the drive stage, the power stage being implemented in a substrate containing gallium arsenide; and a phase compensation circuit configured to change a phase of the RF input signal, wherein either the carrier amplifier or the peaking amplifier is connected to the phase compensation circuit.
Public/Granted literature
- US20220085774A1 POWER AMPLIFIER SYSTEM Public/Granted day:2022-03-17
Information query
IPC分类: