Invention Grant
- Patent Title: Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the same
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Application No.: US17532131Application Date: 2021-11-22
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Publication No.: US11792980B2Publication Date: 2023-10-17
- Inventor: Ji Xia , Wei Xu , Pan Huang , Wenxiang Xu , Beihan Wang
- Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Applicant Address: CN Wuhan
- Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Wuhan
- Agency: BAYES PLLC
- The original application number of the division: US16739681 2020.01.10
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H10B41/27 ; G11C5/04 ; G11C5/06 ; G11C16/04 ; H01L23/528 ; H01L23/532 ; H10B43/27
Abstract:
Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a method for forming a 3D memory device includes forming a first source contact portion in a substrate, forming a dielectric stack over the first source contact portion, and forming a slit opening extending in the dielectric stack and exposing the first source contact portion. The method also includes forming a plurality of conductor layers through the slit opening and form a second source contact portion in the slit opening and in contact with the first source contact portion.
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