Invention Grant
- Patent Title: Two dimensional structure to control flash operation and methods for forming the same
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Application No.: US17000613Application Date: 2020-08-24
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Publication No.: US11792981B2Publication Date: 2023-10-17
- Inventor: Chi-Chung Jen , Yu-Chu Lin , Y. C. Kuo , Wen-Chih Chiang , Keng-Ying Liao , Huai-Jen Tung
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: The Marbury Law Group, PLLC
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H10B41/46 ; H01L21/28 ; H10B41/30 ; H01L29/51
Abstract:
A MOSFET device and method of making, the device including a floating gate layer formed within a trench in a substrate, a tunnel dielectric layer located on sidewalls and a bottom of the trench, a control gate dielectric layer located on a top surface of the floating gate layer, a control gate layer located on a top surface of the control gate dielectric layer and sidewall spacers located on sidewalls of the control gate dielectric layer and the control gate layer.
Public/Granted literature
- US20220059556A1 TWO DIMENSIONAL STRUCTURE TO CONTROL FLASH OPERATION AND METHODS FOR FORMING THE SAME Public/Granted day:2022-02-24
Information query
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