A plasma processing apparatus includes: a source RF generator that generates a source RF pulsed signal of at least three power levels; first and second bias RF generators that generate first and second bias RF pulsed signals of at least two power levels; a synchronization signal generator that generates a synchronization signal; a first matching circuit connected to the source RF generator and an antenna, thereby allowing the source RF pulsed signal to be supplied from the source RF generator to the antenna through the first matching circuit; and a second matching circuit connected to the first and second bias RF generators and a substrate support, thereby allowing the first and second bias RF pulse signals to be supplied from the first and second bias RF generators to the substrate support through the second matching circuit.