Invention Grant
- Patent Title: Self-assembled dielectric on metal RIE lines to increase reliability
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Application No.: US17337753Application Date: 2021-06-03
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Publication No.: US11798840B2Publication Date: 2023-10-24
- Inventor: Wei-Hao Liao , Hsi-Wen Tien , Chih Wei Lu , Yu-Teng Dai , Hsin-Chieh Yao , Chung-Ju Lee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522

Abstract:
Some embodiments of the present disclosure relate to a semiconductor structure including a first conductive wire disposed over a substrate. A dielectric liner is arranged along sidewalls and an upper surface of the first conductive wire and is laterally surrounded by a first dielectric layer. The dielectric liner and the first dielectric layer are different materials. A conductive via is disposed within a second dielectric layer over the first conductive wire. The conductive via has a first lower surface disposed over the first dielectric layer and a second lower surface below the first lower surface and over the first conductive wire.
Public/Granted literature
- US20220392801A1 SELF-ASSEMBLED DIELECTRIC ON METAL RIE LINES TO INCREASE RELIABILITY Public/Granted day:2022-12-08
Information query
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