Invention Grant
- Patent Title: Semiconductor structure, redistribution layer (RDL) structure, and manufacturing method thereof
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Application No.: US17233172Application Date: 2021-04-16
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Publication No.: US11798904B2Publication Date: 2023-10-24
- Inventor: Ping-Heng Wu , Wen Hao Hsu
- Applicant: Changxin Memory Technologies, Inc.
- Applicant Address: CN Anhui
- Assignee: Changxin Memory Technologies, Inc.
- Current Assignee: Changxin Memory Technologies, Inc.
- Current Assignee Address: CN Hefei
- Agency: Sheppard Mullin Richter & Hampton LLP
- Priority: CN 1811385525.6 2018.11.20 CN 1821951661.2 2018.11.20
- Main IPC: H01L23/00
- IPC: H01L23/00
Abstract:
The present disclosure relates to a redistribution layer (RDL) structure, a manufacturing method thereof, and a semiconductor structure having the same. The RDL structure includes an RDL, disposed on a substrate, and including a bond pad portion and a wire portion connected to the bond pad portion, where a thickness of the bond pad portion is greater than a thickness of the wire portion.
Public/Granted literature
- US20210242149A1 SEMICONDUCTOR STRUCTURE, REDISTRIBUTION LAYER (RDL) STRUCTURE, AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-08-05
Information query
IPC分类:
