Invention Grant
- Patent Title: Gate all-around field effect transistors including quantum-based features
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Application No.: US16846052Application Date: 2020-04-10
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Publication No.: US11799035B2Publication Date: 2023-10-24
- Inventor: Supriyo Karmakar
- Applicant: THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK
- Applicant Address: US NY Albany
- Assignee: The Research Foundation for the State University of New York
- Current Assignee: The Research Foundation for the State University of New York
- Current Assignee Address: US NY Albany
- Agent Lance D. Reich; Peter Fallon; Austin Winter
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/12 ; H01L29/423 ; H01L29/786 ; H01L29/49 ; H01L29/778 ; B82Y10/00 ; H01L29/08
Abstract:
Various gate all-around field effect transistors (GAAFET) including quantum-based features are disclosed. GAAFET may include a center core including a first end and a second end, a source region positioned circumferentially around the first end of the center core, and a drain region positioned circumferentially around the second end of the center core. The drain region may also be positioned axially opposite the source region. The GAAFET may also include a gate portion axially positioned between the source region and the drain region. The gate portion may include at least one quantum-based feature circumferentially disposed around the center core, and a gate contact circumferentially disposed around the quantum-based feature(s). The quantum-based feature(s) may include a plurality of quantum dots (QD) or at least one quantum well channel.
Public/Granted literature
- US20200328292A1 GATE ALL-AROUND FIELD EFFECT TRANSISTORS INCLUDING QUANTUM-BASED FEATURES Public/Granted day:2020-10-15
Information query
IPC分类:
