Invention Grant
- Patent Title: Interface circuit and semiconductor output circuit device
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Application No.: US17713158Application Date: 2022-04-04
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Publication No.: US11799482B2Publication Date: 2023-10-24
- Inventor: Seung Ho Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon
- Priority: KR 20200079223 2020.06.29 KR 20210012351 2021.01.28
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H03K19/0185 ; H02H9/04

Abstract:
A device includes an interface circuit connected between a pad and an internal circuit. The interface circuit comprises a pull-up driver including first and second PMOS transistors and a first impedance controller. The first PMOS transistor is connected between a power terminal provided to a power voltage and a first connection node and controlled by a first control bias. The second PMOS transistor connected between the first connection node and the pad and normally turned-on, and the first impedance controller is connected to the first connection node to control an impedance thereof based on the first control bias. The interface circuit further includes a pull-down driver including first and second NMOS transistors. The first NMOS transistor is connected between the pad and a second connection node and controlled by a driving voltage, and the second NMOS transistor is connected between the second connection node and a ground voltage terminal.
Public/Granted literature
- US20220231686A1 INTERFACE CIRCUIT AND SEMICONDUCTOR OUTPUT CIRCUIT DEVICE Public/Granted day:2022-07-21
Information query