• Patent Title: Interface circuit and semiconductor output circuit device
  • Application No.: US17713158
    Application Date: 2022-04-04
  • Publication No.: US11799482B2
    Publication Date: 2023-10-24
  • Inventor: Seung Ho Lee
  • Applicant: SK hynix Inc.
  • Applicant Address: KR Icheon
  • Assignee: SK hynix Inc.
  • Current Assignee: SK hynix Inc.
  • Current Assignee Address: KR Icheon
  • Priority: KR 20200079223 2020.06.29 KR 20210012351 2021.01.28
  • Main IPC: H03K3/00
  • IPC: H03K3/00 H03K19/0185 H02H9/04
Interface circuit and semiconductor output circuit device
Abstract:
A device includes an interface circuit connected between a pad and an internal circuit. The interface circuit comprises a pull-up driver including first and second PMOS transistors and a first impedance controller. The first PMOS transistor is connected between a power terminal provided to a power voltage and a first connection node and controlled by a first control bias. The second PMOS transistor connected between the first connection node and the pad and normally turned-on, and the first impedance controller is connected to the first connection node to control an impedance thereof based on the first control bias. The interface circuit further includes a pull-down driver including first and second NMOS transistors. The first NMOS transistor is connected between the pad and a second connection node and controlled by a driving voltage, and the second NMOS transistor is connected between the second connection node and a ground voltage terminal.
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