Power electronic switching device, power semiconductor module therewith and method for production
Abstract:
A production method and a power electronic connecting device for a power semiconductor module, wherein the connecting device is designed as a flexible film stack of a first and a second electrically conductive film and an electrically insulating film arranged therebetween, wherein at least one of the electrically conductive films is structured in itself and thus forms a plurality of film conductor tracks, wherein a first one of these film conductor tracks has, in a first section, a first average thickness and, in a second section, a second average thickness which is at least 10%, preferably at least 20%, smaller than the first average thickness.
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