Invention Grant
- Patent Title: Semiconductor substrate and semiconductor device
-
Application No.: US17167767Application Date: 2021-02-04
-
Publication No.: US11800709B2Publication Date: 2023-10-24
- Inventor: Takanobu Ono , Yusuke Dohmae
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 18153574 2018.08.17 JP 18221676 2018.11.27
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H10B43/27 ; H01L21/822 ; H01L29/423 ; H01L21/28 ; H10B43/35
Abstract:
A semiconductor wafer according to the present embodiment includes a plurality of semiconductor chip regions and a division region. The plurality of semiconductor chip regions have a semiconductor element. The division region is provided between the semiconductor chip regions adjacent to each other. A first stacked body is provided on the division region. The first stacked body is configured with a plurality of first material films and a plurality of second material films alternately stacked.
Public/Granted literature
- US20210167085A1 SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE Public/Granted day:2021-06-03
Information query
IPC分类:
