Invention Grant
- Patent Title: Memory cell having a top electrode interconnect arranged laterally from a recess
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Application No.: US17528611Application Date: 2021-11-17
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Publication No.: US11800720B2Publication Date: 2023-10-24
- Inventor: Tzu-Yu Chen , Kuo-Chi Tu , Sheng-Hung Shih , Wen-Ting Chu , Chih-Hsiang Chang , Fu-Chen Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H10B53/00
- IPC: H10B53/00 ; G11C11/22 ; H10B53/10 ; H10B53/30 ; H01L49/02

Abstract:
The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a bottom electrode disposed over a substrate. A data storage structure is disposed on the bottom electrode and is configured to store a data state. A top electrode is disposed on the data storage structure. The top electrode has interior surfaces defining a recess within an upper surface of the top electrode. A masking layer contacts a bottom of the recess and extends to over the upper surface of the top electrode. An interconnect extends through the masking layer and to the top electrode. The interconnect is directly over the upper surface of the top electrode.
Public/Granted literature
- US20220077165A1 INTEGRATION METHOD FOR MEMORY CELL Public/Granted day:2022-03-10
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