Memory cell having a top electrode interconnect arranged laterally from a recess
Abstract:
The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a bottom electrode disposed over a substrate. A data storage structure is disposed on the bottom electrode and is configured to store a data state. A top electrode is disposed on the data storage structure. The top electrode has interior surfaces defining a recess within an upper surface of the top electrode. A masking layer contacts a bottom of the recess and extends to over the upper surface of the top electrode. An interconnect extends through the masking layer and to the top electrode. The interconnect is directly over the upper surface of the top electrode.
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