Invention Grant
- Patent Title: Semiconductor device with first and second portions that include silicon and nitrogen
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Application No.: US17333107Application Date: 2021-05-28
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Publication No.: US11804415B2Publication Date: 2023-10-31
- Inventor: Markus Kahn , Oliver Humbel , Philipp Sebastian Koch , Angelika Koprowski , Christian Maier , Gerhard Schmidt , Juergen Steinbrenner
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE 2018121897.4 2018.09.07
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L23/31 ; H01L23/29 ; H01L23/00 ; C23C16/34 ; H01L21/02
Abstract:
A semiconductor device includes: a semiconductor body having an active region and an edge termination region between the active region and a side surface of the semiconductor body; a first portion including silicon and nitrogen; a second portion including silicon and nitrogen, the second portion being in direct contact with the first portion; and a front side metallization in contact with the semiconductor body in the active region. The first portion separates the second portion from the semiconductor body. An average silicon content in the first portion is higher than in the second portion. The front side metallization is interposed between the first portion and the semiconductor body in the active region but not in the edge termination region, and/or the first portion and the second portion are both present in the edge termination region but not in the active region.
Public/Granted literature
- US20210287954A1 SEMICONDUCTOR DEVICE WITH FIRST AND SECOND PORTIONS THAT INCLUDE SILICON AND NITROGEN Public/Granted day:2021-09-16
Information query
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