Invention Grant
- Patent Title: Semiconductor structure comprising heat dissipation member
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Application No.: US17171581Application Date: 2021-02-09
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Publication No.: US11804417B2Publication Date: 2023-10-31
- Inventor: Choon Leong Lou
- Applicant: TECAT TECHNOLOGIES (SUZHOU) LIMITED
- Applicant Address: CN Suzhou
- Assignee: TECAT TECHNOLOGIES (SUZHOU) LIMITED
- Current Assignee: TECAT TECHNOLOGIES (SUZHOU) LIMITED
- Current Assignee Address: CN Suzhou
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: CN 2023141504.5 2020.12.23
- Main IPC: H01L23/373
- IPC: H01L23/373 ; H01L23/00 ; H01L23/367

Abstract:
A semiconductor structure includes a die including a circuitry disposed over a surface of the die or within the die and having specific functions for the die; a heat dissipation member attached to the die by an adhesive disposed between the surface of the die and the heat dissipation member; and a nanostructure disposed between the adhesive and the die, configured to conduct heat from the die to the heat dissipation member, protruding from the adhesive towards the surface of the die and contacting the surface of the die.
Public/Granted literature
- US20220199488A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2022-06-23
Information query
IPC分类: