Invention Grant
- Patent Title: Method for manufacturing semiconductor device and semiconductor manufacturing apparatus
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Application No.: US17188354Application Date: 2021-03-01
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Publication No.: US11804471B2Publication Date: 2023-10-31
- Inventor: Masaya Shima
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP 20154079 2020.09.14
- Main IPC: H01L21/68
- IPC: H01L21/68 ; H01L21/56 ; H01L21/78 ; H01L21/683 ; H01L21/67 ; H01L25/065 ; H01L25/00

Abstract:
A method for manufacturing a semiconductor device is provided. The manufacturing method includes attaching a substrate to a sheet. The manufacturing method includes fragmenting the substrate into a plurality of individual chips. The manufacturing method includes expanding the sheet to widen the spacing between the plurality of chips. The manufacturing method includes covering the main surface and side surface of each of the plurality of chips with resin and sealing the chips to form a sealed body. The manufacturing method includes forming a stacked body in which a plurality of sealed bodies are stacked. The plurality of sealed bodies include a first sealed body and a second sealed body. Forming the stacked body includes stacking the second sealed body on the first sealed body in a state where the position of the chip in the second sealed body is offset in a direction in the plane with respect to the position of the chip in the first sealed body.
Public/Granted literature
- US20220084985A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS Public/Granted day:2022-03-17
Information query
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