Invention Grant
- Patent Title: Reduced thermal resistance attenuator on high-thermal conductivity substrates for quantum applications
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Application No.: US17807979Application Date: 2022-06-21
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Publication No.: US11804641B2Publication Date: 2023-10-31
- Inventor: Salvatore Bernardo Olivadese , Patryk Gumann , Jay M. Gambetta , Jerry M. Chow
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Amin, Turocy & Watson, LLP
- The original application number of the division: US16751444 2020.01.24
- Main IPC: H01P11/00
- IPC: H01P11/00 ; H01P1/22 ; H01P1/30 ; G06N10/00 ; H10N60/00

Abstract:
Techniques for facilitating reduced thermal resistance attenuator on high-thermal conductivity substrates for quantum applications are provided. A device can comprise a substrate that provides a thermal conductivity level that is more than a defined thermal conductivity level. The device can also comprise one or more grooved transmission lines formed in the substrate. The one or more grooved transmission lines can comprise a powder substance. Further, the device can comprise one or more copper heat sinks formed in the substrate. The one or more copper heat sinks can provide a ground connection. Further, the one or more copper heat sinks can be formed adjacent to the one or more grooved transmission lines.
Public/Granted literature
- US20230019142A1 REDUCED THERMAL RESISTANCE ATTENUATOR ON HIGH-THERMAL CONDUCTIVITY SUBSTRATES FOR QUANTUM APPLICATIONS Public/Granted day:2023-01-19
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