Invention Grant
- Patent Title: Three-dimensional memory device with source structure and methods for forming the same
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Application No.: US17550580Application Date: 2021-12-14
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Publication No.: US11805650B2Publication Date: 2023-10-31
- Inventor: Wenxiang Xu , Wei Xu , Pan Huang , Ji Xia
- Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Applicant Address: CN Wuhan
- Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Wuhan
- Agency: BAYES PLLC
- The original application number of the division: US16863203 2020.04.30
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H10B43/27 ; H10B43/10 ; H10B43/35
Abstract:
Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a method for forming a 3D memory device includes the following operations. First, a slit structure and a support structure are formed in a stack structure having interleaved a plurality of sacrificial material layers and a plurality of insulating material layers, the initial support structure between adjacent slit openings of the slit structure. A source structure is formed to include a source portion in each of the slit openings. A pair of first portions of a connection layer is formed in contact with and conductively connected to the source portion. A second portion of the connection layer is formed in contact with and conductively to the pair of first portions of the connection layer.
Public/Granted literature
- US20220102377A1 THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE STRUCTURE AND METHODS FOR FORMING THE SAME Public/Granted day:2022-03-31
Information query
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