Invention Grant
- Patent Title: Manufacturing method of housing for semiconductor device
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Application No.: US17391720Application Date: 2021-08-02
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Publication No.: US11806903B2Publication Date: 2023-11-07
- Inventor: Hiroyuki Masumoto
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP 20182918 2020.10.30
- Main IPC: B29C45/14
- IPC: B29C45/14 ; H01L21/48 ; H01L23/04 ; H01L23/049 ; H01L23/373 ; H01L23/00 ; H01L25/07 ; B29L31/34

Abstract:
Each of a plurality of terminals has a first portion and a second portion being a connection target for a semiconductor element. A manufacturing method of a housing includes a first step arranging, for a lower mold provided with a plurality of holes each of which is a target into which the first portion is inserted, a nest having a third portion covering at least one of the holes, a second step arranging, for the lower mold with the nest being arranged therein, the plurality of terminals by inserting the first portion into the hole not covered by the third portion, a third step arranging an upper mold on the lower mold with the nest and the plurality of terminals being arranged therein, and a fourth step, which is executed after the third step, obtaining the housing by performing resin molding using the lower mold and the upper mold.
Public/Granted literature
- US20220134616A1 MANUFACTURING METHOD OF HOUSING FOR SEMICONDUCTOR DEVICE Public/Granted day:2022-05-05
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