Invention Grant
- Patent Title: Silicon-containing aluminum nitride particles, method for producing same, and light emitting device
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Application No.: US16718730Application Date: 2019-12-18
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Publication No.: US11807528B2Publication Date: 2023-11-07
- Inventor: Shimpei Kinoshita , Shoji Hosokawa
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan
- Agency: HUNTON ANDREWS KURTH LLP
- Priority: JP 18238755 2018.12.20 JP 19216943 2019.11.29
- Main IPC: C01B21/072
- IPC: C01B21/072 ; H01L23/00

Abstract:
Provided are silicon-containing aluminum nitride particles having a high reflectance, a method for producing the same, and a light emitting device. In certain embodiment, silicon-containing aluminum nitride particles having a total amount of aluminum and nitrogen of 90% by mass or more, a content of silicon in a range of 1.5% by mass or more and 4.0% by mass or less, and a content of oxygen in a range of 0.5% by mass or more and 2.0% by mass or less, and having an average reflectance in a wavelength range of 380 nm or more and 730 nm or less of 85% or more.
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