Invention Grant
- Patent Title: Method of enhancing electrical conduction in gallium-doped zinc oxide films and films made therefrom
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Application No.: US17083185Application Date: 2020-10-28
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Publication No.: US11807936B2Publication Date: 2023-11-07
- Inventor: Gary J. Cheng , Qiong Nian
- Applicant: Purdue Research Foundation
- Applicant Address: US IN West Lafayette
- Assignee: Purdue Research Foundation
- Current Assignee: Purdue Research Foundation
- Current Assignee Address: US IN West Lafayette
- Agency: Purdue Research Foundation
- The original application number of the division: US16033669 2018.07.12
- Main IPC: C23C14/58
- IPC: C23C14/58 ; C23C14/28 ; C23C14/08 ; H01B5/14

Abstract:
A method of producing gallium-doped zinc oxide films with enhanced conductivity. The method includes depositing a gallium-doped zinc oxide film on a substrate using a pulsed laser and subjecting the deposited gallium-dope zinc oxide film to a post-treatment effecting recrystallization in the deposited film, wherein the recrystallization enhances the conductivity of the film. Another method of producing gallium-doped zinc oxide films with enhanced conductivity. The method includes the steps of depositing a gallium-doped zinc oxide film on a substrate using a pulsed laser and subjecting the deposited gallium-dope zinc oxide film to an ultraviolet laser beam resulting in recrystallization in the film, wherein the recrystallization enhances the conductivity of the film. A film comprising gallium-doped zinc oxide wherein the film contains a recrystallized grain structure on its surface.
Public/Granted literature
- US20210062329A1 METHOD OF ENHANCING ELECTRICAL CONDUCTION IN GALLIUM-DOPED ZINC OXIDE FILMS AND FILMS MADE THEREFROM Public/Granted day:2021-03-04
Information query
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