- Patent Title: EUV lithography mask with a porous reflective multilayer structure
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Application No.: US17394005Application Date: 2021-08-04
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Publication No.: US11809075B2Publication Date: 2023-11-07
- Inventor: Chih-Tsung Shih , Shih-Chang Shih , Li-Jui Chen , Po-Chung Cheng
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: HAYNES AND BOONE, LLP
- Main IPC: G03F1/24
- IPC: G03F1/24 ; G03F1/52 ; G03F1/80 ; G03F1/54

Abstract:
A lithography mask includes a substrate that contains a low thermal expansion material (LTEM). The lithography mask also includes a reflective structure disposed over the substrate. The reflective structure includes a first layer and a second layer disposed over the first layer. At least the second layer is porous. The mask is formed by forming a multilayer reflective structure over the LTEM substrate, including forming a plurality of repeating film pairs, where each film pair includes a first layer and a porous second layer. A capping layer is formed over the multilayer reflective structure. An absorber layer is formed over the capping layer.
Public/Granted literature
- US20210364907A1 EUV Lithography Mask With A Porous Reflective Multilayer Structure Public/Granted day:2021-11-25
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