Invention Grant
- Patent Title: Complex device
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Application No.: US17754939Application Date: 2020-09-17
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Publication No.: US11812596B2Publication Date: 2023-11-07
- Inventor: Byung guk Lim
- Applicant: AMOTECH CO., LTD.
- Applicant Address: KR Incheon
- Assignee: AMOTECH CO., LTD.
- Current Assignee: AMOTECH CO., LTD.
- Current Assignee Address: KR Incheon
- Agency: BROADVIEW IP LAW, PC
- Priority: KR 20190129779 2019.10.18
- International Application: PCT/KR2020/012537 2020.09.17
- International Announcement: WO2021/075738A 2021.04.22
- Date entered country: 2022-04-15
- Main IPC: H01C7/12
- IPC: H01C7/12 ; H05K9/00 ; H01G4/40 ; H01C7/10

Abstract:
A complex device is provided. A complex device according to an embodiment of the present invention comprises: a suppressor including a pair of first dielectric sheet layers having a first dielectric constant and a pair of internal electrodes spaced apart from each other on one surface of one of the pair of first dielectric sheet layers; a capacitor including a plurality of second dielectric sheet layers having a second dielectric constant and a plurality of capacitor electrodes provided on each of the plurality of second dielectric sheet layers; and a pair of external terminals provided on both sides of the suppressor and the capacitor to be connected to the plurality of capacitor electrodes and the pair of internal electrodes. Here, provided is the complex device in which the first dielectric constant is greater than the second dielectric constant.
Public/Granted literature
- US20220394891A1 COMPLEX DEVICE Public/Granted day:2022-12-08
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