Invention Grant
- Patent Title: Memory, memory test system, and memory test method
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Application No.: US17650317Application Date: 2022-02-08
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Publication No.: US11817166B2Publication Date: 2023-11-14
- Inventor: Jia Wang
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: SYNCODA LLC
- Agent Feng Ma
- Priority: CN 2011166903.9 2020.10.27
- Main IPC: G11C29/12
- IPC: G11C29/12 ; G11C29/14 ; G11C29/36

Abstract:
A memory includes: an input circuit, configured to: receive an outside clock signal, and output a first test clock signal; a test path selection circuit, connected to the input circuit, and configured to output a second test clock signal according to a read clock command; and an output circuit, connected to the test path selection circuit, and configured to convert the second test clock signal into a third test clock signal and output the third test clock signal to outside of the memory. In the embodiments of the disclosure, a time delay of inputting a clock signal into each chip under test is quantified, to acquire an actual output delay of the chip, thereby improving the accuracy of parallel tests of a plurality of chips.
Public/Granted literature
- US20220165345A1 MEMORY, MEMORY TEST SYSTEM, AND MEMORY TEST METHOD Public/Granted day:2022-05-26
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