- Patent Title: Method of operating selector device, method of operating nonvolatile memory apparatus applying the same, electronic circuit device including selector device, and nonvolatile memory apparatus
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Application No.: US17855424Application Date: 2022-06-30
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Publication No.: US11830549B2Publication Date: 2023-11-28
- Inventor: Tae Jung Ha , Soo Gil Kim , Jeong Hwan Song , Tae Joo Park , Tae Jun Seok , Hye Rim Kim , Hyun Seung Choi
- Applicant: SK hynix Inc. , Industry-University Cooperation Foundation Hanyang University ERICA Campus
- Applicant Address: KR Icheon
- Assignee: SK hynix Inc.,Industry-University Cooperation Foundation Hanyang University ERICA Campus
- Current Assignee: SK hynix Inc.,Industry-University Cooperation Foundation Hanyang University ERICA Campus
- Current Assignee Address: KR Icheon; KR Ansan
- Priority: KR 20210087022 2021.07.02
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G11C11/16 ; H10B63/00 ; H10N70/00

Abstract:
Disclosed are a method of operating a selector device, a method of operating a nonvolatile memory apparatus to which the selector device is applied, an electronic circuit device including the selector device, and a nonvolatile memory apparatus. The method of operating the selector device controls access to a memory element, and includes providing the selector device including a switching layer and first and second electrodes disposed on both surfaces of the switching layer, which includes an insulator and a metal element, and applying a multi-step voltage pulse to the switching layer via the first and second electrodes to adjust a threshold voltage of the selector device, the multi-step voltage pulse including a threshold voltage control pulse and an operating voltage pulse. The operating voltage pulse has a magnitude for turning on the selector device, and the threshold voltage control pulse has a lower magnitude lower than the operating voltage pulse.
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