Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US17019366Application Date: 2020-09-14
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Publication No.: US11830948B2Publication Date: 2023-11-28
- Inventor: Jiun-Ming Kuo , Hsin-Chih Chen , Che-Yuan Hsu , Kuo-Chin Liu , Han-Yu Tsai , You-Ting Lin , Jen-Hong Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/3065 ; H01L29/66
Abstract:
A semiconductor device includes a semiconductor substrate, at least one semiconductor fin and a gate stack. The semiconductor fin is disposed on the semiconductor substrate. The semiconductor fin includes a first portion, a second portion and a first neck portion between the first portion and the second portion. A width of the first portion decreases as the first portion becomes closer to the first neck portion, and a width of the second portion increases as the second portion becomes closer to a bottom surface of the semiconductor substrate. The gate stack partially covers the semiconductor fin.
Public/Granted literature
- US20210257497A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-08-19
Information query
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