A solid-state imaging device includes a pixel array unit and a current source array unit. The pixel array unit includes N pixel units arrayed in a first direction. Each pixel unit includes a photodiode and an amplification MOS transistor. The current source array unit includes N current sources. Each current source includes a first MOS transistor, a second MOS transistor, a third MOS transistor, a fourth MOS transistor, and a setting circuit. The setting circuit sets ON/OFF of the third MOS transistor on the basis of a voltage of the signal line, thereby suppressing fluctuations in an amount of current flowing from a Vr supply line to a ground potential supply terminal via a common node and the first MOS transistor.