Invention Grant
- Patent Title: Semiconductor device with pad structure and method for fabricating the same
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Application No.: US17484988Application Date: 2021-09-24
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Publication No.: US11832439B2Publication Date: 2023-11-28
- Inventor: Tsu-Chieh Ai
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agent Xuan Zhang
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H10B12/00

Abstract:
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a pad structure positioned above the substrate and including a bottom portion and two side portions, wherein the bottom portion is positioned parallel to a top surface of the substrate, and the two side portions are positioned on two sides of the bottom portion and extending along a direction parallel to a normal of the top surface of the substrate; and an insulator film surrounding the pad structure. A top surface of the insulator film is at a vertical level greater than a vertical level of a top surface of the pad structure.
Public/Granted literature
- US20230099828A1 SEMICONDUCTOR DEVICE WITH PAD STRUCTURE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2023-03-30
Information query
IPC分类: