A data storage device comprises a lead actuator that actuates a first read-write head over a first disk and a support actuator that actuates a second read-write head over a second disk. A spindle motor rotates the first and second disks. In response to an emergency power off (EPO) event, a processing device retracts and parks the actuators using an internal supply voltage generated from a back electromotive force (BEMF) voltage of the spindle motor, and egresses data from a volatile to a non-volatile semiconductor memory. Egress is throttled before the actuators are retracted and parked when the internal supply voltage falls to or below a first egress throttling threshold voltage. Egress is throttled after the actuators are retracted and parked when the internal supply voltage falls to or below a second egress throttling threshold voltage.