Invention Grant
- Patent Title: Resistance patterns for an On-Die EPM
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Application No.: US17462118Application Date: 2021-08-31
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Publication No.: US11837512B2Publication Date: 2023-12-05
- Inventor: Oh Kyu Kwon
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon-si
- Priority: KR 20210034733 2021.03.17
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L23/522

Abstract:
A semiconductor device includes: a first resistance chain including first upper resistance segments, first resistance via plugs, and first lower resistance segments; a second resistance chain including second upper resistance segments, second resistance via plugs, and second lower resistance segments; and a third resistance chain including third upper resistance segments, third resistance via plugs, and third lower resistance segments, wherein the first upper resistance segments have a first upper effective resistance distance, and the second upper resistance segments have a second upper effective resistance distance, and the third upper resistance segments have a third upper effective resistance distance, and the first upper effective resistance distance is equal to the third upper effective resistance distance, and the second upper effective resistance distance is an integer multiple of the first upper effective resistance distance.
Public/Granted literature
- US20220301953A1 RESISTANCE PATTERNS FOR AN ON-DIE EPM Public/Granted day:2022-09-22
Information query
IPC分类: