Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US17178434Application Date: 2021-02-18
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Publication No.: US11837569B2Publication Date: 2023-12-05
- Inventor: Yoshiharu Okada , Masatoshi Kawato , Keiichi Niwa
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 20138900 2020.08.19
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/31 ; H01L25/18 ; H01L25/00 ; H01L23/538

Abstract:
A semiconductor device according to the present embodiment includes a circuit board comprising a plurality of electrodes provided on a first surface, a first resin layer provided on the first surface around the electrodes, and a second resin layer provided on the first resin layer. A first semiconductor chip is connected to a first one of the electrodes. A second semiconductor chip is provided above the first semiconductor chip, being larger than the first semiconductor chip, and is connected to a second one of the electrodes via a metal wire. A third resin layer is provided between the first semiconductor chip and the second semiconductor chip and between the second resin layer and the second semiconductor chip, and covers the first semiconductor chip.
Public/Granted literature
- US20220059493A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2022-02-24
Information query
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