Invention Grant
- Patent Title: Transistors with enhanced dopant profile and methods for forming the same
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Application No.: US17852861Application Date: 2022-06-29
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Publication No.: US11837667B2Publication Date: 2023-12-05
- Inventor: Min-Kun Dai , I-Cheng Chang , Cheng-Yi Wu , Han-Ting Tsai , Tsann Lin , Chung-Te Lin , Wei-Gang Chiu
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: The Marbury Law Group, PLLC
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/66 ; H01L21/02 ; H01L21/425 ; H01L21/8238 ; H01L21/8234 ; H01L29/24 ; H01L27/12
Abstract:
A planar insulating spacer layer is formed over a substrate, and a vertical stack of a gate electrode, a gate dielectric layer, and a first semiconducting metal oxide layer may be formed thereabove. The first semiconducting metal oxide layer includes atoms of a first n-type dopant at a first average dopant concentration. A second semiconducting metal oxide layer is formed over the first semiconducting metal oxide layer. Portions of the second semiconducting metal oxide layer are doped with the second n-type dopant to provide a source-side n-doped region and a drain-side n-doped region that include atoms of the second n-type dopant at a second average dopant concentration that is greater than the first average dopant concentration. Various dopants may be introduced to enhance performance of the thin film transistor.
Public/Granted literature
- US20220336671A1 TRANSISTORS WITH ENHANCED DOPANT PROFILE AND METHODS FOR FORMING THE SAME Public/Granted day:2022-10-20
Information query
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