Invention Grant
- Patent Title: P-i-n photodetector
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Application No.: US17298359Application Date: 2019-11-28
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Publication No.: US11837677B2Publication Date: 2023-12-05
- Inventor: Alexander Bessonov , Mark Allen
- Applicant: EMBERION OY
- Applicant Address: FI Espoo
- Assignee: EMBERION OY
- Current Assignee: EMBERION OY
- Current Assignee Address: FI Espoo
- Agency: SQUIRE PATTON BOGGS (US) LLP
- Priority: GB 19524 2018.11.30
- International Application: PCT/FI2019/050849 2019.11.28
- International Announcement: WO2020/109664A 2020.06.04
- Date entered country: 2021-05-28
- Main IPC: H01L31/105
- IPC: H01L31/105 ; H01L31/0224
Abstract:
A photodetector which comprises a measurement layer (15) and at least a first photoactive layer (11) which covers the measurement layer (15). The measurement layer (15) may be a transistor channel or a charge accumulation electrode. The conductivity type of the measurement layer is n-type, p-type or ambipolar and the first photoactive layer (11) exhibits intrinsic semiconductivity.
Public/Granted literature
- US20220102570A1 P-I-N PHOTODETECTOR Public/Granted day:2022-03-31
Information query
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