Invention Grant
- Patent Title: DFB laser DC-coupled output power configuration scheme
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Application No.: US18246906Application Date: 2021-12-24
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Publication No.: US11837847B2Publication Date: 2023-12-05
- Inventor: Jinghu Li , Zhang Fan , Liangqiong Shi , Weitan Yao , Weiyin Zheng , Hanghui Tu
- Applicant: XIAMEN EOCHIP SEMICONDUCTOR CO., LTD
- Applicant Address: CN Xiamen
- Assignee: XIAMEN EOCHIP SEMICONDUCTOR CO., LTD
- Current Assignee: XIAMEN EOCHIP SEMICONDUCTOR CO., LTD
- Current Assignee Address: CN Xiamen
- Agency: Novoclaims Patent Services LLC
- Agent Mei Lin Wong
- International Application: PCT/CN2021/141108 2021.12.24
- International Announcement: WO2023/108791A 2023.06.22
- Date entered country: 2023-03-28
- Main IPC: H04B10/00
- IPC: H04B10/00 ; H01S5/042 ; H01S5/12

Abstract:
A DFB laser DC-coupled output power configuration scheme belongs to the field of laser drivers in optical communication integrated circuits. The present invention solves the existing problems in the conventional DFB laser power supply configuration scheme. The power configuration scheme of the present invention utilizes an external or internal power configuration unit to provide two electric DC power supplies with a fixed voltage difference for the transmitting unit TX of the DFB laser and the optical transceiver integrated chip, and at the same time optimizes the transmitting unit TX. The optimization scheme is that: the transistors in the transmitting unit TX are all low-voltage high-speed tubes, the transmitting unit TX includes a negative capacitance structure composed of capacitors C1 and C2, serving as an auxiliary structure for improving bandwidth. After optimization, the minimum voltage of the power supply voltage port TVCC of the transmitting unit TX is 2.7V.
Public/Granted literature
- US20230291175A1 DFB laser DC-coupled Output Power Configuration Scheme Public/Granted day:2023-09-14
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