Invention Grant
- Patent Title: Memory array error correction
-
Application No.: US17548057Application Date: 2021-12-10
-
Publication No.: US11841766B2Publication Date: 2023-12-12
- Inventor: Sujeet V. Ayyapureddi
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G06F11/07 ; G11C29/12 ; G11C29/08 ; G11C29/18

Abstract:
Methods, systems, and devices for memory operations are described. A codeword may be associated with a set of data and stored in a memory device may be detected as having a plurality of bit errors. Based on detecting the plurality of bit errors in the codeword, an address of the codeword may be stored and an indication that at least one codeword stored in the memory device has a plurality of bit errors may be indicated. Based on indicating that at least one codeword in the memory device has a plurality of bit errors, a write command for writing, to the memory device, a second codeword associated with the set of data may be received. Additionally, or alternatively, a command that triggers an error correction operation at an address range of the memory device may be received at a memory device.
Public/Granted literature
- US20230185662A1 MEMORY ARRAY ERROR CORRECTION Public/Granted day:2023-06-15
Information query