Invention Grant
- Patent Title: Memory circuit with leakage current blocking mechanism and memory device having the memory circuit
-
Application No.: US17721207Application Date: 2022-04-14
-
Publication No.: US11842769B2Publication Date: 2023-12-12
- Inventor: Tien-Yen Wang , Yun-Chen Chou , Chun-Hsiung Hung
- Applicant: MACRONIX International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. PATENTS
- Main IPC: G11C11/419
- IPC: G11C11/419

Abstract:
At least one embodiment of the disclosure is directed to a memory circuit having a leakage current blocking mechanism and a memory device having the memory circuit. In an aspect, one embodiment of the disclosure describes a memory circuit which includes not limited to a memory array which includes a first memory cell connected to a first bit line and a second memory cell connected to a second bit line, a pre-charge circuit which is connected to the memory array and includes a first pre-charge device, and a programming circuit which is connected to the pre-charge circuit and comprises a programming transistor which has a higher drive capability than the first pre-charge device so as to drive the first bit line to a ground voltage in response to the first write operation, wherein in response to a first write operation on the first memory cell, a current flow exists between the programming circuit and the first pre-charge device.
Public/Granted literature
- US20230335187A1 MEMORY CIRCUIT WITH LEAKAGE CURRENT BLOCKING MECHANISM AND MEMORY DEVICE HAVING THE MEMORY CIRCUIT Public/Granted day:2023-10-19
Information query
IPC分类: