Invention Grant
- Patent Title: Method for reducing oscillation during turn on of a power transistor by regulating the gate switching speed control of its complementary power transistor
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Application No.: US18060639Application Date: 2022-12-01
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Publication No.: US11843368B2Publication Date: 2023-12-12
- Inventor: Zheming Li , Mark-Matthias Bakran , Daniel Domes , Robert Maier , Franz-Josef Niedernostheide
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Harrity & Harrity, LLP
- The original application number of the division: US17458942 2021.08.27
- Main IPC: H03K17/04
- IPC: H03K17/04 ; H03K17/042 ; H03K5/24

Abstract:
A method is provided for driving a half bridge circuit that includes a first transistor and a second transistor. The method includes generating an off-current during a plurality of turn-off switching events to control a gate voltage of the second transistor; measuring a transistor parameter of the second transistor during a first turn-off switching event during which the second transistor is transitioned to an off state, wherein the transistor parameter is indicative of an oscillation at the first transistor during a corresponding turn-on switching event during which the first transistor is transitioned to an on state; and activating a portion of the off-current for the second turn-off switching event, including regulating an interval length of the second portion for the second turn-off switching event based on the measured transistor parameter measured during the first turn-off switching event.
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