Invention Grant
- Patent Title: Method of manufacturing semiconductor device, recording medium, and substrate processing method
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Application No.: US17568072Application Date: 2022-01-04
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Publication No.: US11848201B2Publication Date: 2023-12-19
- Inventor: Tsukasa Kamakura , Takaaki Noda , Yoshiro Hirose
- Applicant: KOKUSAI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Volpe Koenig
- Priority: JP 15092429 2015.04.28
- The original application number of the division: US15085459 2016.03.30
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/40 ; C23C16/455

Abstract:
A film where a first layer and a second layer are laminated is formed on a substrate by performing: forming the first layer by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing: supplying a source to the substrate, and supplying a reactant to the substrate, under a first temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively; and forming the second layer by performing a second cycle a predetermined number of times, the second cycle including non-simultaneously performing: supplying the source to the substrate, and supplying the reactant to the substrate, under a second temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively, the second temperature being different from the first temperature.
Public/Granted literature
- US20220122833A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM Public/Granted day:2022-04-21
Information query
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